Memristive behaviour of electrodeposited bismuth selenide

We demonstrate memristive functions of the room temperature thermoelectric material Bi-Se fabricated by electrochemical deposition in combination with active electrode Ag-based contacts. We present microfabrication steps for creating polymer molds for the growth of compact memristive films. The electrical measurements show clear forming-free resistive switching behaviour for the electrochemically deposited material while temperature dependent measurements point to Schottky and space-charge-limited-current conduction mechanisms. For the envisioned combination of the memristors with a thermoelectric device we can conclude that electrodeposition is a viable method to produce silver-chalcogenide based non-volatile memristors for co-integration in zero power sensors.